SI4830CDY Datasheet, PDF (9/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
T_J = 150 °C
1
T_J = 25 °C
0.10
I_D = 8 A
0.08
0.06
Si4830CDY
Vishay Siliconix
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10^-2
30 V
10^-3
20 V
10^-4
10 V
10^-5
0.04
T_J = 125 °C
0.02
T_J = 25 °C
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
60
48
36
24
12
10^-6
0
25
50
75
100 125 150
T_J - Junction Temperature (°C)
Reverse Current (Schottky)
100
Limited by R_DS(on)*
10
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Document Number: 68884
S09-2109-Rev. B, 12-Oct-09
1 ms
1
10 ms
100 ms
0.1
T_A = 25 °C
Single Pulse
1s
10 s
BVDSS Limited ^DC
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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