SI4830CDY Datasheet, PDF (2/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4830CDY
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_DS
ΔV_DS/T_J
V_GS = 0 V, I_D = 1 mA
V_GS = 0 V, I_D = 1 mA
I_D = 250 µA
V_GS(th) Temperature Coefficient
ΔV_GS(th)/T_J
I_D = 250 µA
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 1 mA
V_DS = V_GS, I_D = 1 mA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
V_DS = 0 V, V_GS = ± 20 V
V_DS = 30 V, V_GS = 0 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 100 °C
V_DS = 30 V, V_GS = 0 V, T_J = 100 °C
On-State Drain Current^b
I_D(on)
V_DS = 5 V, V_GS = 10 V
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 8 A
Drain-Source On-State Resistance^b
R_DS(on)
V_GS = 10 V, I_D = 8 A
V_GS = 4.5 V, I_D = 5 A
V_GS = 4.5 V, I_D = 5 A
Forward Transconductance^b
g_fs
V_DS = 15 V, I_D = 8 A
V_DS = 15 V, I_D = 8 A
Dynamic^a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_rss
Channel-1
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
Channel-2
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V_DS = 15 V, V_GS = 10 V, I_D = 8 A
Q_g
V_DS = 15 V, V_GS = 10 V, I_D = 8 A
Channel-1
V_DS = 15 V, V_GS = 4.5 V, I_D = 8 A
Q_gs
Channel-2
Q_gd
V_DS = 15 V, V_GS = 4.5 V, I_D = 8 A
Gate Resistance
R_g
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
f = 1 MHz
Min. ^Typ.a Max. Unit
Ch-1
Ch-2
Ch-1
Ch-1
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
30
V
30
32
mV/°C
-6
1
3
V
1
3
100
nA
100
0.001
0.016 0.10
mA
0.025
1.1
10
20
A
20
0.0156 0.020
0.0156 0.020
Ω
0.019 0.025
0.019 0.025
29
S
29
Ch-1
950
Ch-2
950
Ch-1
155
pF
Ch-2
185
Ch-1
65
Ch-2
65
Ch-1
16.5 25
Ch-2
16.5 25
Ch-1
7.3
11
Ch-2
Ch-1
7.3
11
nC
2.7
Ch-2
2.7
Ch-1
2.1
Ch-2
2.1
Ch-1 0.2 1.2 2.4
Ω
Ch-2 0.2 1.2 2.4
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Document Number: 68884
S09-2109-Rev. B, 12-Oct-09