SI4830CDY Datasheet, PDF (4/15 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4830CDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
V_GS = 10 V thru 4 V
24
24
18
18
12
V_GS = 3 V
6
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.024
0.022
0.020
V_GS = 4.5 V
12
6
0
0
1200
960
720
T_C = 25 °C
T_C = 125 °C
1
2
T_C = - 55 °C
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
0.018
0.016
V_GS = 10 V
0.014
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 8 A
8
V_DS = 10 V
6
V_DS = 15 V
V_DS = 20 V
4
2
0
0.0
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4
3.6
7.2
10.8
14.4
18.0
Q_g - Total Gate Charge (nC)
Gate Charge
480
C_oss
240
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 8 A
1.6
1.4
V_GS = 10 V
1.2
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68884
S09-2109-Rev. B, 12-Oct-09