SI4532CDY Datasheet, PDF (8/15 Pages) Vishay Siliconix – N- and P-Channel 30 V (D-S) MOSFET

Si4532CDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
2.0
V_GS = 10 V thru 6 V
V_GS = 5 V
12
1.5
9
6
3
0
0.0
0.20
V_GS = 4 V
V_GS = 3 V
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
1.0
T_C = 25 °C
0.5
T_C = 125 °C
T_C = - 55 °C
0.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
600
0.15
0.10
V_GS = 4.5 V
V_GS = 10 V
450
C_iss
300
0.05
0.00
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 2.5 A
8
6
4
V_DS = 15 V
V_DS = 7.5 V
V_DS = 22.5 V
2
150
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 3.2 A
1.6
V_GS = 10 V
1.4
V_GS = 4.5 V
1.2
1.0
0.8
0
0
2
4
6
8
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Document Number: 64805
8
S11-0652-Rev. B, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000