SI4532CDY Datasheet, PDF (4/15 Pages) Vishay Siliconix – N- and P-Channel 30 V (D-S) MOSFET

Si4532CDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
24
1.2
V_GS = 10 V thru 6 V
18
V_GS = 5 V
12
6
0
0
0.10
V_GS = 4 V
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.08
0.06
0.04
V_GS = 4.5 V
V_GS = 10 V
0.02
0.00
0 2 4 6 8 10 12 14 16
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 2.5 A
8
6
4
V_DS = 7.5 V
V_DS = 15 V
V_DS = 22.5 V
1.0
0.8
0.6
0.4
0.2
0.0
0
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
400
350
C_iss
300
250
200
150
100
C_rss
50
C_oss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
I_D = 6 A
1.5
1.3
1.1
V_GS = 10 V
V_GS = 4.5 V
2
0.9
0
0
2
4
6
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
Document Number: 64805
4
S11-0652-Rev. B, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000