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| SI4532CDY Datasheet, PDF (2/15 Pages) Vishay Siliconix – N- and P-Channel 30 V (D-S) MOSFET | |||
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Si4532CDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
ïVDS/TJ
ID = 250 µA
ID = - 250 µA
VGS(th) Temperature Coefficient
ïVGS(th)/TJ
ID = 250 µA
IID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
RDS(on)
gfs
VDS = 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS =ï 5 V, VGS = 10 V
VDS = -ï 5 V, VGS = - 10 V
VGS = 10 V, ID = 3.5 A
VGS = - 10 V, ID = - 3.5 A
VGS = 4.5 V, ID = 2.8 A
VGS = - 4.5 V, ID = - 2.5 A
VDS = 15 V, ID = 2.5 A
VDS = - 15 V, ID = - 3.5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 15 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 15 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 15 V, VGS = 10 V, ID = 2.5 A
Qg
VDS = - 15 V, VGS = - 10 V, ID = - 2.5 A
N-Channel
VDS = 15 V, VGS = 4.5 V ID = 2.5 A
Qgs
P-Channel
Qgd
VDS = - 15 V, VGS = - 4.5 V, ID = - 2.5 A
Gate Resistance
Rg
f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
30
- 30
1.0
- 1.0
20
- 12
0.6
2.0
Typ.a Max. Unit
V
33
- 33
- 5.8
4.5
mV/°C
3.0
V
- 3.0
100
nA
- 100
1
-1
µA
5
-5
A
0.038 0.047
0.073 0.089
ï
0.052 0.065
0.113 0.140
7
S
7
305
340
65
pF
67
29
51
6
9
7.8
12
2.75
4.5
4.1
6.2
nC
1.3
1.3
0.9
1.8
3.1
6.2
ï
10
20
www.vishay.com
Document Number: 64805
2
S11-0652-Rev. B, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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