SI4916DY Datasheet, PDF (7/13 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4916DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
35
30
25
20
15
10
5
0
0.0
V_GS = 10 thru 4 V
3V
0.3
0.6
0.9
1.2
1.5
V_DS – Drain-to-Source Voltage (V)
Output Characteristics
40
35
30
25
20
15
T_C = 125 °C
10
5
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS – Gate-to-Source Voltage (V)
Transfer Characteristics
0.025
0.022
1400
C_iss
1120
V_GS = 4.5 V
0.019
840
0.016
V_GS = 10 V
560
0.013
C_oss
280
C_rss
0.010
0
5 10 15 20 25 30 35 40
I_D – Drain Current (A)
On-Resistance vs. Drain Current
0
0
5
10
15
20
25
30
V_DS – Drain-to-Source Voltage (V)
Capacitance
6
I_D = 7.8 A
5
V_DS = 10 V
4
V_DS = 15 V
3
2
1.6
V_GS = 10 V and 4.5 V
1.4
I_D = 7.8 A
1.2
1.0
0.8
1
0
0.0
2.2
4.4
6.6
8.8
11.0
Q_g – Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0 25 50 75 100 125 150
T_J – Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
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