SI4916DY Datasheet, PDF (4/13 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4916DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
35
30
25
20
15
10
5
0
0.00
V_GS = 10 thru 5 V
4V
3V
0.30
0.60
0.90
1.20
1.50
V_DS – Drain-to-Source Voltage (V)
Output Characteristics
40
35
30
25
20
15
T_C = 125 °C
10
5
25 °C
- 55 °C
0
0
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
Transfer Characteristics
0.025
0.022
0.019
V_GS = 4.5 V
0.016
0.013
V_GS = 10 V
0.010
0
5 10 15 20 25 30 35 40
I_D – Drain Current (A)
On-Resistance vs. Drain Current
1050
900
C_iss
750
600
450
300
C_oss
150
C_rss
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
Capacitance
6
I_D = 7.5 A
5
4
3
2
V_DS = 10 V
V_DS = 15 V
1.6
V_GS = 10 V and 4.5 V
I_D = 7.5 A
1.4
1.2
1.0
1
0.8
0
0123456789
Q_g – Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J – Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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4
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09