SI4916DY Datasheet, PDF (5/13 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
0.05
T_J = 150 °C
10
0.04
0.03
1
T_J = 25 °C
0.02
Si4916DY
Vishay Siliconix
I_D = 7.5 A
0.01
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
I_D = 250 µA
0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J – Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
0.00
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
120
100
80
60
40
20
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
I_DM Limited
10
1 ms
1
I_D(on)
Limited
10 ms
100 ms
0.1
T_C = 25 °C
Single Pulse
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
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