SI8802DB Datasheet, PDF (6/8 Pages) Vishay Siliconix – N-Channel 8 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
Si8802DB
Vishay Siliconix
0.2
0.1
0.1
0.05
Notes:
P_DM
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 185 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 Board with Maximum Copper)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes:
P_DM
0.02
0.01
0.0001
Single Pulse
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 330 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 Board with Minimum Copper)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67999.
S15-0346-Rev. C, 23-Feb-15
6
Document Number: 67999
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000