SI8802DB Datasheet, PDF (5/8 Pages) Vishay Siliconix – N-Channel 8 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.5
3
2.5
2
1.5
1
0.5
0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Current Derating*
Note
When mounted on 1" x 1" FR4 with full copper.
0.8
0.6
0.4
0.2
0.0
25
Si8802DB
Vishay Siliconix
50
75
100
125
150
T_A - Ambient Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_{J (max.)} = 150 °C,n using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-0346-Rev. C, 23-Feb-15
5
Document Number: 67999
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000