SI8802DB Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 8 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
10
V_GS = 5 V thru 2 V
12
8
9
V_GS = 1.5 V
6
Si8802DB
Vishay Siliconix
6
3
V_GS = 1 V
0
0
0.5
1
1.5
2
2.5
3
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.16
0.12
0.08
V_GS = 1.2 V
V_GS = 1.5 V
V_GS = 1.8 V
0.04
0
0
V_GS = 4.5 V
V_GS = 2.5 V
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current
5
I_D = 1 A
4
V_DS = 4 V
3
V_DS = 2 V
2
V_DS = 6.4 V
1
4
T_C = 25 °C
2
T_C = 125 °C
0
0.0
T_C = - 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
600
500
C_iss
400
300
200
100
C_rss
C_oss
0
0
2
4
6
8
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.4
V_GS = 4.5 V, 2.5 V, 1.8 V; I_D = 1 A
1.2
V_GS = 1.5 V, I_D = 0.2 A
1.0
V_GS = 1.2 V, I_D = 0.1 A
0.8
0
0
1
2
3
4
5
Q_g - Total Gate Charge (nC)
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S15-0346-Rev. C, 23-Feb-15
3
Document Number: 67999
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