SI8416DB Datasheet, PDF (5/8 Pages) Vishay Siliconix – N-Channel 8 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si8416DB
Vishay Siliconix
24
15
20
12
16
Package Limited
9
12
6
8
3
4
0
0
25
50
75
100 125 150
T_C - Ambient Temperature (°C)
0
25
50
75
100
125
150
T_C - Case Temperature (°C)
Current Derating*
Power Derating




* The power dissipation P_D is based on T_J (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in
settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when
this rating falls below the package limit.
S15-0932-Rev. B, 20-Apr-15
5
Document Number: 63716
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000