SI8416DB Datasheet, PDF (2/8 Pages) Vishay Siliconix – N-Channel 8 V (D-S) MOSFET

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Si8416DB
Vishay Siliconix
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current ^a
V_DS
V_DS/T_J
V_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
Drain-Source On-State Resistance ^a
R_DS(on)
Forward Transconductance ^a
g_fs
Dynamic ^b
V_GS = 0, I_D = 250 μA
I_D = 250 μA
V_DS = V_GS, I_D = 250 μA
V_DS = 0 V, V_GS = ± 5 V
V_DS = 8 V, V_GS = 0 V
V_DS = 8 V, V_GS = 0 V, T_J = 70 °C
V_DS  5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 1.5 A
V_GS = 2.5 V, I_D = 1 A
V_GS = 1.8 V, I_D = 1 A
V_GS = 1.5 V, I_D = 0.5 A
V_GS = 1.2 V, I_D = 0.5 A
V_DS = 4 V, I_D = 1.5 A
8
-
-
V
-
2.2
-
mV/°C
-
-2.7
-
0.35
-
0.80
V
-
-
± 100
nA
-
-
1
μA
-
-
10
5
-
-
A
-
0.019
0.023
-
0.021
0.025
-
0.023
0.030

-
0.027
0.040
-
0.040
0.095
-
22
-
S
Input Capacitance
C_iss
-
1470
-
Output Capacitance
C_oss
V_DS = 4 V, V_GS = 0 V, f = 1 MHz
-
580
-
pF
Reverse Transfer Capacitance
C_rss
-
450
-
Total Gate Charge
Q_g
-
17
26
Gate-Source Charge
Q_gs
V_DS = 4 V, V_GS = 4.5 V, I_D = 1.5 A
-
1.8
-
nC
Gate-Drain Charge
Q_gd
-
3.4
-
Gate Resistance
Rg
V_GS = 0.1 V, f = 1 MHz
-
2.5
-

Turn-On Delay Time
t_d(on)
-
13
25
Rise Time
Turn-Off Delay Time
t_r
V_DD = 4 V, R_L = 2.7 
-
t_d(off)
I_D  1.5 A, V_GEN = 4.5 V, R_g = 1 
-
15
30
ns
40
80
Fall Time
t_f
-
10
20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
I_S
T_C = 25 °C
-
Pulse Diode Forward Current
I_SM
-
Body Diode Voltage
V_SD
I_S = 1.5 A, V_GS = 0
-
Body Diode Reverse Recovery Time
t_rr
-
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Q_rr
t_a
I_F = 1.5 A, dI/dt = 100 A/μs, T_J = 25 °C
-
-
Reverse Recovery Rise Time
t_b
-
-
20
A
-
20
0.7
1.2
V
35
70
ns
18
35
nC
13
-
ns
22
-
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0932-Rev. B, 20-Apr-15
2
Document Number: 63716
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