SI7216DN Datasheet, PDF (5/14 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

Si7216DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.20
10
150 °C
0.16
1
0.12
0.1
25 C
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
I_D = 250 µA
0.2
0 ^ID ^{= 5 mA}
- 0.2
- 0.4
- 0.6
0.08
125 °C
0.04
25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
Single Pulse Power, Junction-to-Ambient
1 ms
1
10 ms
100 ms
0.1
1s
10 s
T_A = 25 °C
Single Pulse
0.01
0.1
1
DC
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73771
www.vishay.com
S11-1142-Rev. C, 13-Jun-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000