SI7216DN Datasheet, PDF (4/14 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

Si7216DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
2.0
V_GS = 10 thru 5 V
16
4V
1.6
12
1.2
T_C = 125 °C
8
0.8
4
0
0.0
0.05
3V
0.3
0.6
0.9
1.2
1.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.4
25 °C
- 55 °C
0.0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
0.04
0.03
V_GS = 4.5 V
V_GS = 10 V
0.02
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 5 A
8
6
4
V_DS = 20 V
V_DS = 40 V
V_DS = 30 V
2
800
C_iss
600
400
200
C_oss
0 ^Crss
0
8
16
24
32
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 5 A
1.5
V_GS = 10 V
V_GS = 4.5 V
1.2
0.9
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
Document Number: 73771
4
S11-1142-Rev. C, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000