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SI7216DN Datasheet, PDF (2/14 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET
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Si7216DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
t  10 s
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 94 °C/W.
Symbol
RthJA
RthJC
Typical
38
4.5
Maximum
50
6
Unit
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0, ID = 250 µA
ID = 250 µA
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
IDSS
ID(on)
RDS(on)
gfs
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS 10 V, ID = 5 A
VGS 4.5 V, ID = 4 A
VDS = 15 V, ID = 5 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 20 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
VDS = 20 V, VGS = 10 V, ID = 5 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 20 V, VGS = 4.5 V, ID = 5 A
f = 1 MHz
VDD = 20 V, RL = 4 
ID  5 A, VGEN = 4.5 V, Rg = 1 
VDD = 20 V, RL = 4 
ID  5 A, VGEN = 10 V, Rg = 1 
Min.
Typ.
Max. Unit
40
V
43
- 5.8
mV/°C
1
3
V
± 100 nA
1
µA
10
10
A
0.025 0.032

0.031 0.039
25
S
670
90
pF
50
12.5
19
5.5
8.5
nC
2
2
3.4
5.1

16
25
142
215
16
25
7
12
ns
9
15
57
90
19
30
5
10
www.vishay.com
Document Number: 73771
2
S11-1142-Rev. C, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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