SI4620DY Datasheet, PDF (5/13 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4620DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
0.12
0.10
T_J = 150 °C
0.08
10
0.06
T_J = 25 °C
0.04
25 °C
I_D = 6 A
125 °C
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.4
2.2
I_D = 250 µA
2.0
1.8
1.6
1.4
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
1.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
0
10 ^-3
10 ^-2
10 ^-1
1
10
Time (s)
Single Pulse Power
100 600
Document Number: 73862
S09-1341-Rev. D, 13-Jul-09
10
P(t) = 0.0001
P(t) = 0.001
1
P(t) = 0.01
P(t) = 0.1
0.1
P(t) = 1
P(t) = 10
T_A = 25 °C
Single Pulse
0.01
0.1
1
BVDSS Limited
10
DC
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
5