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| SI4620DY Datasheet, PDF (1/13 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode | |||
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Si4620DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
30
0.035 at VGS = 10 V
7.4
0.052 at VGS = 4.5 V
6.1
Qg (Typ.)
4.2 nC
SCHOTTKY PRODUCT SUMMARY
VKA (V)
30
VF (V)
Diode Forward Voltage
0.470 at 3 A
IF (A)a
3
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠LITTLE FOOT® Plus Power MOSFET
⢠Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
⢠Load Switch for Portable Applications
- Ideal for Boost Circuits
⢠HDD Driver
A1
A2
S3
G4
SO-8
8K
7K
6D
5D
Top View
Ordering Information: Si4620DY-T1-E3 (Lead (Pb)-free)
Si4620DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
K
G
S
A
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET)
VDS
Reverse Voltage (Schottky)
VKA
Gate-Source Voltage (MOSFET)
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) (MOSFET)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (MOSFET)
IDM
Continuous Source Current (MOSFET Diode Conduction)
TC = 25 °C
TA = 25 °C
IS
Average Forward Current (Schottky)
IF
Pulsed Forward Current (Schottky)
IFM
TC = 25 °C
Maximum Power Dissipation (MOSFET)
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
PD
Maximum Power Dissipation (Schottky)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
Document Number: 73862
S09-1341-Rev. D, 13-Jul-09
Limit
30
30
± 20
7.5
6
6
4.8
40
2.6
1.7a, b
3
8
3.1
2
2a, b
1.3a, b
3
1.9
1.8
1.1
- 55 to 150
260
Unit
V
A
W
°C
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