SI4620DY Datasheet, PDF (2/13 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4620DY
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)^{a, c}
Maximum Junction-to-Foot (Drain) (MOSFET)
Maximum Junction-to-Ambient (Schottky)
Maximum Junction-to-Foot (Drain) (Schottky)
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 10 s.
c. Maximum under Steady State conditions for MOSFETS is 110 °C/W.
d. Maximum under Steady State conditions for Schottky is 115 °C/W.
Symbol
R_thJA
R_thJF
R_thJA
R_thJF
Typical
53
30
55
32
Maximum
62.5
40
65
42
Unit
°C/W
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 µA
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
ΔV_DS/TJ
ΔV_GS(th)/TJ
I_D = 250 µA
Gate-Source Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
Gate-Source Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 55 °C
On-State Drain Current^a
I_D(on)
V_DS ≤ 5 V, V_GS = 10 V
Drain-Source On-State Resistance^a
R_DS(on)
V_GS = 10 V, I_D = 6 A
V_GS = 4.5 V, I_D = 4.9 A
Forward Transconductance^a
g_fs
V_DS = 15 V, I_D = 6 A
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
C_rss
Total Gate Charge
Q_g
V_DS = 15 V, V_GS = 10 V, I_D = 6 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
V_DS = 15 V, V_GS = 4.5 V, I_D = 6 A
f = 1 MHz
V_DD = 15 V, R_L = 3.1 Ω
I_D ≅ 4.8 A, V_GEN = 4.5 V, R_g = 6 Ω
Min.
30
1.2
30
Typ.
32.5
- 5.3
0.028
0.041
12
Max.
Unit
2.5
± 100
1
10
0.035
0.052
V
mV/°C
V
nA
µA
A
Ω
S
520
1040
115
230
pF
55
110
8.6
13
4.2
6.5
nC
1.8
1.5
2.8
Ω
16
30
36
54
ns
21
40
17
40
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Document Number: 73862
S09-1341-Rev. D, 13-Jul-09