SIA436DJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 8 V (D-S) MOSFET

SiA436DJ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
0.025
T_J = 150 °C
T_J = 25 °C
1
0.02
0.015
0.01
I_D = 15.7 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.005
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.7
0.55
I_D = 250 μA
0.4
0.25
0.1
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
30
25
20
15
10
5
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
Single Pulse Power (Junction-to-Ambient)
100
Limited by R_DS(on)*
10
1
0.1
100 μs
1 ms
10 ms
100 ms
1 s, 10 s
DC
T_A = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
Document Number: 63535
4
S11-2242-Rev. A, 14-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000