SIA436DJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 8 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
20
V_GS = 5 V thru 2 V
V_GS = 1.5 V
40
15
30
10
20
5
10
V_GS = 1 V
0
0
0
0.5
1
1.5
2
0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
SiA436DJ
Vishay Siliconix
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.3
0.6
0.9
1.2
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.025
0.02
V_GS = 1.2 V
0.015
V_GS = 1.5 V
0.01
V_GS = 1.8 V
V_GS = 2.5 V
0.005
0
V_GS = 4.5 V
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
5
I_D = 15.7 A
4
V_DS = 2 V
3
V_DS = 4 V
2
V_DS = 6.4 V
1
2050
1640
C_iss
1230
820
410
0
0
C_oss
C_rss
2
4
6
8
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
I_D = 15.7 A
1.3
1.1
V_GS = 4.5 V
V_GS = 2.5 V
0.9
0
0
5
10
15
20
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63535
www.vishay.com
S11-2242-Rev. A, 14-Nov-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000