SI7850DP Datasheet, PDF (4/11 Pages) Vishay Siliconix – N-Channel 60-V (D-S) Fast Switching MOSFET

Si7850DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
100
0.2
80
I_D = 250 μA
0.0
60
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
40
20
0
0.01
0.1
1
10
100 600
Time (s)
Single Pulse Power
0.2
0.1
0.1
0.05
0.02
0.01
10- ⁴
Single Pulse
10- ³
2
1
Duty Cycle = 0.5
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 58 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10- ²
10- ¹
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- ⁴
10- ³
10- ²
10- ¹
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71625.
www.vishay.com
4
Document Number: 71625
S09-0227-Rev. E, 09-Feb-09