SI7850DP Datasheet, PDF (3/11 Pages) Vishay Siliconix – N-Channel 60-V (D-S) Fast Switching MOSFET

Si7850DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.06
1400
0.05
0.04
0.03
0.02
V_GS = 4.5 V
V_GS = 10 V
0.01
0.00
0
8
16
24
32
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current
1200
1000
C_iss
800
600
400
C_oss
200
C_rss
0
0
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
V_DS = 30 V
8
I_D = 10.3 A
6
2.0
1.8
V_GS = 10 V
I_D = 10.3 A
1.6
1.4
1.2
4
1.0
2
0.8
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
50
0.06
0.05
T_J = 150 °C
10
T_J = 25 °C
0.04
0.03
I_D = 10.3 A
0.02
0.01
1
0.00
0.5
1.0
1.5
2.0
2.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71625
S09-0227-Rev. E, 09-Feb-09
www.vishay.com
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