SI7850DP Datasheet, PDF (1/11 Pages) Vishay Siliconix – N-Channel 60-V (D-S) Fast Switching MOSFET

Si7850DP
Vishay Siliconix
N-Channel 60-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.022 at V_GS = 10 V
60
0.031 at V_GS = 4.5 V
I_D (A)
10.3
8.7
PowerPAK SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7850DP-T1-E3 (Lead (Pb)-free)
Si7850DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFETs
• New Low Thermal Resistance PowerPAK^®
Package with Low 1.07 mm Profile
• PWM Optimized for Fast Switching
• 100 % R_g Tested
APPLICATIONS
• Primary Side Switch for 24 V DC/DC Applications
• Secondary Synchronous Rectifier
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
60
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 85 °C
I_D
10.3
6.2
7.5
4.5
Continuous Source Current
I_S
3.7
1.5
A
Pulsed Drain Current
I_DM
40
Avalanche Current^b
I_AS
15
Single Avalanche Energy^b
E_AS
11
mJ
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
4.5
2.3
1.8
0.9
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Guaranteed by design, not subject to production testing.
Symbol
R_thJA
R_thJC
Typical
22
58
2.6
Maximum
28
70
3.3
Unit
°C/W
Document Number: 71625
S09-0227-Rev. E, 09-Feb-09
www.vishay.com
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