SI7810DN Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

Si7810DN
Vishay Siliconix
TYPICAL CHARACTERISTICS T_A = 25°C, unless otherwise noted
0.6
50
0.4
I_D = 250µA
0.2
40
0.0
30
- 0.2
- 0.4
20
- 0.6
- 0.8
10
- 1.0
- 1.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1
10
100
600
Time (s)
Single Pulse Power, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Single Pulse
10^-3
2
Notes:
P _DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 65 °C/W
3. T _JM - T_A = P _DMZ_thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10^-4
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?70689.
www.vishay.com
4
Document Number: 70689
S-81544-Rev. C, 07-Jul-08