SI7810DN Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

TYPICAL CHARACTERISTICS T_A = 25°C, unless otherwise noted
0.20
1000
Si7810DN
Vishay Siliconix
0.16
0.12
0.08
0.04
V_GS = 6 V
V_GS = 10 V
0.00
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 50 V
8
I_D = 5.4 A
6
4
2
0
0
2
4
6
8
10 12 14
Q_g - Total Gate Charge (nC)
Gate Charge
20
T_J = 150 °C
10
800
C_iss
600
400
C _{os s}
200
C_rss
0
0
20
40
60
80
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.2
2.0
V_GS = 10 V
I_D = 5.4 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.16
0.12
I_D = 5.4 A
0.08
T_J = 25 °C
0.04
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 70689
S-81544-Rev. C, 07-Jul-08
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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