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SI7810DN Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET
N-Channel 100-V (D-S) MOSFET
Si7810DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.062 at VGS = 10 V
100
0.084 at VGS = 6 V
ID (A)
5.4
4.6
PowerPAK 1212-8
FEATURES
• Halogen-free Option Available
• TrenchFET® Power MOSFET
• New Low Thermal Resistance
• PowerPAK® 1212-8 Package with Low
1.07 mm Profile
• PWM Optimized
APPLICATIONS
• Primary Side Switch
• In-Rush Current Limiter
RoHS
COMPLIANT
3.30 mm
S
1
S
3.30 mm
2
S
3
G
4
D
8
D
7
D
6
D
5
Bottom View
Ordering Information: Si7810DN-T1-E3 (Lead (Pb)-free)
Si7810DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
100
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
5.4
3.4
4.3
2.8
A
Pulsed Drain Current
IDM
20
Continuous Source Current (Diode Conduction)a
IS
3.2
1.3
A
Single Avalanche Current
L = 0.1 mH
IAS
19
Single Avalanche Energy (Duty Cycle 1 %)
EAS
18
mJ
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
3.8
1.5
2.0
0.8
W
Operating Junction and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Soldering Recommendationsb,c
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t ≤ 10 s
Steady State
RthJA
26
65
33
81
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.9
2.4
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 70689
S-81544-Rev. C, 07-Jul-08
www.vishay.com
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