SI4840BD Datasheet, PDF (4/10 Pages) Vishay Telefunken – N-Channel 40-V (D-S) MOSFET

Si4840BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
0.030
0.025
I_D = 12.4 A
T_J = 150 °C
10
0.020
0.015
125 °C
T_J = 25 °C
0.010
0.005
25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.4
I_D = 250 µA
2.2
2.0
1.8
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
1.6
20
1.4
10
1.2
1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
100 600
Time (s)
Single Pulse Power (Junction-to-Ambient)
100
Limited by R_DS(on)*
100 µs
10
1 ms
1
10 ms
100 ms
0.1
1s
10 s
0.01
0.1
T_A = 25 °C
Single Pulse
1
BVDSS
Limited
10
DC
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 69795
S09-0532-Rev. C, 06-Apr-09