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| SI4840BD Datasheet, PDF (1/10 Pages) Vishay Telefunken – N-Channel 40-V (D-S) MOSFET | |||
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N-Channel 40-V (D-S) MOSFET
Si4840BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.009 at VGS = 10 V
40
0.012 at VGS = 4.5 V
ID (A)d
19
16
Qg (Typ.)
15 nC
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4840BDY-T1-E3 (Lead (Pb)-free)
Si4840BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠TrenchFET® Power MOSFET
⢠100 % Rg Tested
⢠100 % UIS Tested
⢠Compliant to RoHS directive 2002/95/EC
APPLICATIONS
⢠Synchronous Rectification
⢠POL, IBC
- Secondary Side
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
40
V
VGS
± 20
TC = 25 °C
19
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
15
12.4a, b
9.9a, b
A
Pulsed Drain Current
IDM
50
Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
15
EAS
11
mJ
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
5
2.1a, b
A
TC = 25 °C
6
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
3.8
2.5a, b
W
TA = 70 °C
1.6a, b
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot (Drain)
t ⤠10 s
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on TC = 25 °C.
Symbol
RthJA
RthJF
Typical
37
17
Maximum
50
21
Unit
°C/W
Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
www.vishay.com
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