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SI4840BD Datasheet, PDF (3/10 Pages) Vishay Telefunken – N-Channel 40-V (D-S) MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
10
VGS = 10 V thru 4 V
40
8
Si4840BDY
Vishay Siliconix
30
20
10
0
0
0.012
3V
2V
0.4
0.8
1.2
1.6
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.010
0.008
0.006
VGS = 4.5 V
VGS = 10 V
0.004
0
10
20
30
40
50
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
VDS = 20 V
8
ID = 12.4 A
6
4
2
0
0
5
10 15 20 25 30 35
Qg - Total Gate Charge (nC)
Gate Charge
6
TC = 25 °C
4
2
TC = 125 °C
0
TC = - 55 °C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2400
2000
Ciss
1600
1200
800
Coss
400
Crss
0
0 5 10 15 20 25 30 35 40
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
VGS = 10 V
ID = 12.4 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
www.vishay.com
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