SI4666DY Datasheet, PDF (4/10 Pages) Vishay Siliconix – N-Channel 25 V (D-S) MOSFET

Si4666DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.040
10
T_J = 150 °C
1
0.1
T_J = 25 °C
0.032
0.024
0.016
0.01
0.008
I_D = 10 A
T_J = 125 °C
T_J = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.3
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
80
0.1
64
- 0.1
- 0.3
- 0.5
48
I_D = 5 mA
32
I_D = 250 μA
16
- 0.7
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Limited by R_DS(on)*
10
1 ms
10 ms
1
100 ms
0.1
T_A = 25 °C
Single Pulse
1s
10 s
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 66587
S10-1044-Rev. A, 03-May-10