SI4666DY Datasheet, PDF (3/10 Pages) Vishay Siliconix – N-Channel 25 V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
10
V_GS = 10 V thru 2 V
32
V_GS = 1 V
8
24
6
16
4
Si4666DY
Vishay Siliconix
T_C = 25 °C
8
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.015
2
T_C = 125 °C
T_C = - 55 °C
0
0.0
0.6
1.2
1.8
2.4
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1600
0.013
0.011
0.009
0.007
V_GS = 2.5 V
V_GS = 4.5 V
V_GS = 10 V
0.005
0
8
16
24
32
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 10 V
6
V_DS = 5 V
4
V_DS = 15 V
1280
C_iss
960
640
C_oss
320
C_rss
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
I_D = 10 A
1.5
V_GS = 10 V
1.3
V_GS = 2.5 V
1.1
2
0.9
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 66587
S10-1044-Rev. A, 03-May-10
www.vishay.com
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