SI4666DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 25 V (D-S) MOSFET

N-Channel 25 V (D-S) MOSFET
Si4666DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
25
R_DS(on) (Ω)
0.010 at V_GS = 10 V
0.011 at V_GS = 4.5 V
0.014 at V_GS = 2.5 V
I_D (A)^a
16.5
15.8
14
Q_g (Typ.)
10.7 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
APPLICATIONS
• Synchronous Buck Converter
• DC/DC Converter
D
G
Top View
Ordering Information: Si4666DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
25
V
V_GS
± 12
T_C = 25 °C
16.5
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
9.3
11.5^b,c
Pulsed Drain Current
T_A = 70 °C
9.4^b,c
A
I_DM
40
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
4.5
2.3^b,c
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I_AS
15
E_AS
11.25
mJ
T_C = 25 °C
5
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
3.2
2.50^b,c
W
T_A = 70 °C
1.6^b,c
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
t ≤ 10 s
Steady State
Symbol
R_thJA
R_thJF
Typical
38
20
Maximum
50
25
Unit
°C/W
Document Number: 66587
S10-1044-Rev. A, 03-May-10
www.vishay.com
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