SI4914BD Datasheet, PDF (2/15 Pages) Vishay Telefunken – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4914BDY
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel-1
Typ.
Max.
Maximum Junction-to-Ambient^a
t ≤ 10 s
R_thJA
59
70
Maximum Junction-to-Foot (Drain)
Steady State
R_thJF
36
45
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 120 °C/W for Channel 1 and 115 °C/W for Channel 2.
Channel-2
Typ.
Max.
52
62.5
32
40
Unit
°C/W
MOSFET SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 µA
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
ΔV_DS/T_J
ΔV_GS(th)/T_J
I_D = 250 µA
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = 20 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 85 °C
On-State Drain Current^b
I_D(on)
Drain-Source On-State Resistance^{b R}DS(on)
Forward Transconductance^b
g_fs
Diode Forward Voltage^b
V_SD
Dynamic^a
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 8 A
V_GS = 10 V, I_D = 8 A
V_GS = 4.5 V, I_D = 6 A
V_GS = 4.5 V, I_D = 6 A
V_DS = 15 V, I_D = 8 A
V_DS = 15 V, I_D = 8 A
I_S = 1.7 A, V_GS = 0 V
I_S = 1 A, V_GS = 0 V
Channel-1
V_DS = 15 V, V_GS = 4.5 V, I_D = 8 A
Channel-2
V_DS = 15 V, V_GS = 4.5 V, I_D = 8 A
Gate Resistance
R_g
Ch-1
Ch-2
Ch-1
Ch-1
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
30
30
1.2
1.2
20
20
Typ.^a Max.
Unit
V
35
- 6.2
mV/°C
2.7
V
2.7
100
nA
100
1
100
µA
15
10000
A
0.0165 0.021
0.0155 0.020
Ω
0.0215 0.027
0.020 0.025
29
S
33
0.77
1.1
V
0.46
0.5
6.7
10.5
7.0
11.0
2.8
nC
2.8
2.0
2.0
2.9
6.0
Ω
2.0
4.0
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Document Number: 69654
S09-2109-Rev. E, 12-Oct-09