SI4914BD Datasheet, PDF (1/15 Pages) Vishay Telefunken – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4914BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
Channel-1
Channel-2
V_DS (V)
30
R_DS(on) (Ω)
0.021 at V_GS = 10 V
0.027 at V_GS = 4.5 V
0.020 at V_GS = 10 V
0.025 at V_GS = 4.5 V
I_D (A)^{a Q}g ^(Typ.)
8.4
6.7
7.4
8^d
7.0
8^d
SCHOTTKY PRODUCT SUMMARY
V_DS (V)
30
V_SD (V)
Diode Forward Voltage
0.50 V at 1.0 A
I_F (A)
2.0
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT^® Plus Integrated Schottky
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook PC
- System Power dc-to-dc
D₁
D_{1 1}
D_{1 2}
G_{2 3}
S_{2 4}
SO-8
8 ^G1
7 ^S1^/D2
6 ^S1^/D2
5 ^S1^/D2
Top View
Ordering Information: Si4914BDY-T1-E3 (Lead (Pb)-free)
Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
G₁
N-Channel 1
MOSFET
G₂
N-Channel 2
MOSFET
S₂
S₁/D₂
Schottky Diode
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
20
T_C = 25 °C
8.4
8^d
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_C = 70 °C
T_A = 25 °C
I_D
6.7
6.7^{b, c}
7.4
7.4^{b, c}
T_A = 70 °C
5.3^{b, c}
5.7^{b, c}
Pulsed Drain Current (10 µs Pulse Width)
I_DM
40
40
A
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
2.4
1.0^{b, c}
2.8
1.1^{b, c}
PulseD Source-Drain Current
I_SM
40
40
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
I_AS
15
E_AS
11.2
mJ
T_C = 25 °C
2.7
3.1
Maximum Power Dissipation^{a, b}
T_C = 70 °C
T_A = 25 °C
P_D
1.7
1.7^{b, c}
2.0
2.0^{b, c}
W
T_A = 70 °C
1.1^{b, c}
1.2^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Package limited.
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
www.vishay.com
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