SI4914BD Datasheet, PDF (10/15 Pages) Vishay Telefunken – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4914BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
11.0
8.8
Package Limited
6.6
4.4
2.2
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
4.0
1.5
3.2
1.2
2.4
0.9
1.6
0.6
0.8
0.3
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power, Junction-to-Foot
0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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10
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09