71M6521DE Datasheet, PDF (87/101 Pages) Teridian Semiconductor Corporation – Energy Meter IC

71M6521DE/71M6521FE
Energy Meter IC
RECOMMENDED EXTERNAL COMPONENTS
DATASHEET
JANUARY 2008
NAME
FROM
TO
FUNCTION
VALUE UNIT
C1
V3P3A AGND Bypass capacitor for 3.3V supply
≥0.1±20% μF
C2
V3P3D DGND Bypass capacitor for 3.3V output
0.1±20% μF
CSYS
V3P3SYS DGND Bypass capacitor for V3P3SYS
≥1.0±30% μF
C2P5
V2P5
DGND Bypass capacitor for V2P5
0.1±20% μF
32.768kHz crystal – electrically similar to ECS
XTAL
XIN
XOUT .327-12.5-17X or Vishay XT26T, load capaci-
32.768
kHz
CXS ^†
CXL ^†
tance 12.5pF
XIN
AGND Load capacitor for crystal (exact value depends
27±10%
pF
XOUT
AGND
on crystal specifications and parasitic capaci-
tance of board).
27±10%
pF
† _{Depending on trace capacitance, higher or lower values for CXS and CXL must be used. Capacitance from XIN to GNDD}
and XOUT to GNDD (combining pin, trace and crystal capacitance) should be 35pF to 37pF.
RECOMMENDED OPERATING CONDITIONS
PARAMETER
3.3V Supply Voltage (V3P3SYS, V3P3A)
V3P3A and V3P3SYS must be at the
same voltage
CONDITION
Normal Operation
Battery Backup
VBAT
No Battery
Battery Backup
BRN and LCD modes
SLEEP mode
Operating Temperature
Maximum input voltage on DIO/SEG pins
configured as DIO input. *
MISSION mode
BROWNOUT mode
LCD mode
*Exceeding this limit will distort the LCD waveforms on other pins.
MIN TYP
3.0
3.3
0
MAX
3.6
3.6
UNIT
V
V
Externally Connect to V3P3SYS
3.0
3.8
V
2.0
3.8
V
-40
+85
ºC
V3P3SYS+0.3
V
VBAT+0.3
V
VBAT+0.3
V
v1.0
© 2005-2008 TERIDIAN Semiconductor Corporation
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