DG213 Datasheet, PDF (6/7 Pages) TEMIC Semiconductors – Quad Complementary CMOS Analog Switch

DG213
Test Circuits (Cont’d)
+5 V
V_L
V_S1
S₁
IN₁
V_S2
S₂
IN₂
GND
+15 V
V+
D₁
V_O1
D₂
V_O2
V–
–15 V
R_L2
300 kW
C_L2
35 pF
R_L1
1 kW
C_L1
35 pF
Logic
3V
Input
0V
V_S1
V_O1
Switch _{0 V}
Output _VS2
V_O2
Switch ^{0 V}
Output
50%
90%
90%
t_D
t_D
C_L (includes fixture and stray capacitance)
Figure 3. Break-Before-Make
+15 V
C
V_S
R_g = 50 W
0V, 2.4 V
V+
S
D
IN
GND
V– C
Off Isolation = 20 log ^VS
V_O
–15 V
Figure 4. Off Isolation
C
+15 V
V+
V_S
S₁
D₁
V_O
R_g = 50 W
IN₁
0V, 2.4 V
R_L
NC
S₂
D₂
0V, 2.4 V
IN₂
C = RF bypass
X_TALK Isolation = 20 log
V_S
V_O
GND
V– C
–15 V
50 W
V_O
R_L
Figure 5. Channel-to-Channel Crosstalk
R_g
V_g
3V
+15 V
V+
S
D
IN
GND
V–
–15 V
V_O
C_L
1000 pF
DV_O
V_O
IN_X ON
OFF
ON
DV_O = measured voltage error due to charge injection
The charge injection in coulombs is Q = C_L x DV_O
Figure 6. Charge Injection
6
Siliconix
S-56461—Rev. C, 29-Dec-97