DG213 Datasheet, PDF (4/7 Pages) TEMIC Semiconductors – Quad Complementary CMOS Analog Switch

DG213
Typical Characteristics
r_DS(on) vs. V_D and Power Supply Voltages
110
100
90
"5 V
80
70
60
"10 V
50
"15 V
40
30
"20 V
20
10
–20 –16 –12 –8 –4 0 4 8 12 16 20
V_D – Drain Voltage (V)
r_DS(on) vs. V_D and Single Power Supply Voltages
300
250
5V
V– = 0 V
V_L = 5 V
200
150
7V
10 V
100
12 V
50
0
0
2
4
6
8
10
12
V_D – Drain Voltage (V)
Leakage Current vs. Temperature
1 nA
V+ = 15 V
V– = –15 V
V_S, V_D = "14 V
100 pA
10 pA
I_S(off), I_D(off)
1 pA
–55 –35 –15
5 25 45 65
Temperature (_C)
85 105 125
4
r_DS(on) vs. V_D and Temperature
100
V+ = 15 V
90 _{V– = –15 V}
80
70
60
125_C
50
85_C
40
25_C
30
–55_C
20
10
0
–15 –10 –5
0
5
10 15
V_D – Drain Voltage (V)
Leakage Currents vs. Analog Voltage
40
V+ = 22 V
30 V– = –22 V
T_A = 25_C
20
I_D(on)
10
0
I_S(off), I_D(off)
–10
–20
–30
–40
–20 –15 –10 –5 0 5 10 15 20
V_ANALOG – Analog Voltage (V)
Q_S, Q_D – Charge Injection vs. Analog Voltage
30
20
10
V+ = 15 V
0 _{V– = –15 V}
–10
V+ = 12 V
V– = 0 V
–20
–30
–15
–10 –5
0
5
10
15
V_ANALOG – Analog Voltage (V)
Siliconix
S-56461—Rev. C, 29-Dec-97