CNY21N Datasheet, PDF (6/10 Pages) TEMIC Semiconductors – Optocoupler with Phototransistor Output

CNY21N
Insulation Rated Parameters (according to VDE 0884)
Parameters
Test Conditions Symbol Min.
Typ.
Max.
Unit
Partial discharge ^{Routine test 100%, ttest = 1 s}
V_pd
2.8
kV
Lot test
t_Tr = 10 s,
V_IOTM
8
kV
test voltage
(sample test)
t_test = 60 s
(see figure 3)
V_pd
2.2
kV
V_IO = 500 V
R_IO
10¹²
V_IO = 500 V,
R_IO
10¹¹
W
W
Insulation resistance
T_amb = 100°C
V_IO = 500 V,
R_IO
10⁹
W
T_amb = 180°C
(construction test only)
V_IOTM
V
t₁, t₂ = 1 to 10 s
t₃, t₄ = 1 s
V_pd
V_IOWM
V_IORM
0
t₃
t_test = 60 s
t₄
t₁
t₂
t_stress = 62 s
94 9225
t_Tr =10 s
t
Figure 3. Test pulse diagram for sample test according to DIN VDE 0884
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TELEFUNKEN Semiconductors
Rev. A1, 11-Jun-96