CNY21N Datasheet, PDF (2/10 Pages) TEMIC Semiconductors – Optocoupler with Phototransistor Output

CNY21N
Features
According to VDE 0884
D Rated impulse voltage (transient overvoltage)
V_IOTM = 8 kV peak
D Isolation test voltage (partial discharge test voltage)
V_pd = 2.8 kV peak
D Rated isolation voltage (RMS includes DC)
V_IOWM = 1000 V_RMS (1450 V peak)
D Rated recurring peak voltage (repetitive)
V_IORM = 1000 V_RMS
D Creeping current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
D Thickness through insulation > 3 mm
D Isolation materials according to UL 94
D Pollution degree 2 (DIN/VDE 0110)
D Climatic classification 55/085/21 (IEC 68 part 1)
D Further approvals: BS 415, BS 7002, SETI: IEC 950,
UL 1577: File no: E 76222
D Special construction: therefore extra low coupling
capacity of typical 0.3 pF, high Common Mode
Rejection
D Low temperature coefficient of CTR
D Current Transfer Ratio (CTR) of typical 60%
Absolute Maximum Ratings
Input (Emitter)
Parameters
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Test Conditions
Symbol
Value
Unit
t_p ≤ 10 ms
T_amb ≤ 25°C
V_R
5
V
I_F
50
mA
I_FSM
1.5
A
P_tot
120
mW
T_j
100
°C
Output (Detector)
Parameters
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
V_CEO
32
V
Emitter collector voltage
V_ECO
5
V
Collector current
I_C
50
mA
Collector peak current
t_p/T = 0.5, t_p ≤ 10 ms
I_CM
100
mA
Power dissipation
T_amb ≤ 25°C
P_tot
130
mW
Junction temperature
T_j
100
°C
Coupler
Parameters
Test Conditions
Symbol
Value
Unit
AC isolation test voltage (RMS)
V_IO
8.2
kV
Total power dissipation
T_amb ≤ 25°C
P_tot
250
mW
Ambient temperature range
T_amb
–55 to +85
°C
Storage temperature range
T_stg
–55 to +100
°C
Soldering temperature
2 mm from case t ≤ 10 s
T_sd
260
°C
2 (10)
TELEFUNKEN Semiconductors
Rev. A1, 11-Jun-96