CNY21N Datasheet, PDF (4/10 Pages) TEMIC Semiconductors – Optocoupler with Phototransistor Output

CNY21N
Electrical Characteristics
T_amb = 25°C
Input (Emitter)
Parameters
Forward voltage
Breakdown voltage
Junction capacitance
Test Conditions
I_F = 50 mA
I_R = 100 mA
V_R = 0, f = 1 MHz
Symbol
V_F
V_(BR)
C_j
Min.
5
Typ.
Max.
Unit
1.25
1.6
V
V
50
pF
Output (Detector)
Parameters
Collector emitter
breakdown voltage
Emitter collector
breakdown voltage
Collector emitter
cut-off current
Test Conditions
Symbol Min.
Typ.
Max.
Unit
I_C = 1 mA
V_(BR)CEO
32
V
I_E = 100 mA
V_(BR)ECO
5
V
V_CE = 20 V, I_f = 0
I_CEO
200
nA
Coupler
Parameters
Test Conditions
Symbol Min.
Typ.
Max.
Unit
AC isolation test voltage f = 50 Hz, t = 1 s
V_IO
8.2
kV
(RMS)
Collector emitter
saturation voltage
I_F = 10 mA, I_C = 1 mA V_CEsat
0.3
V
Cut-off frequency
W ^{VCE = 5 V, IF = 5 mA,}
R_L = 100
f_c
170
kHZ
Coupling capacitance
f = 1 MHz
C_k
0.3
pF
I_C/I_F
I_F = 10 mA, V_CE = 5 V
CTR
0.25
0.6
4 (10)
TELEFUNKEN Semiconductors
Rev. A1, 11-Jun-96