U3660M Datasheet, PDF (4/7 Pages) TEMIC Semiconductors – Baseband Delay Line (64 Us)

U3660M-B
Parameters
Test Conditions / Pins Symbol Min.
Typ.
Max.
Unit
Transient time of delayed 300 ns transient of SECAM
t_tr
550
ns
signal at Pin 11 respec-
input signal, C_load = 22 pF
tively Pin 12
Transient time of non-
300 ns transient of SECAM
t_tr
350
ns
delayed signal at Pin 11
input signal, C_load = 22 pF
respectively Pin 12
Sandcastle pulse input
Pin 5
Sandcastle frequency
Top pulse voltage
f_SC
14.0 15.625 17.0
kHz
the leading edge of the
V₅
3
burst-key pulse is used for
7
V
timing
Internal slicing level
Input current
Input capacitance
V_slice V₅ –2.0 V₅ –1.5 V₅ –1.0
V
I₅
10
mA
C₅
10
pF
+12 V 560^W
5V1
10W
47 mF
10W
47 mF
Chroma
decoder
22 nF
–(R–Y) ^{1 nF}
1
16
–(B–Y) ^{1 nF}
14
5
22 nF
nc
9
2,4,6,7,8,15
11
U 3660 M
12
13
3 10
–(R–Y)
–(B–Y)
W SC pulse 11 k
6.8 kW
1 ^RMreW^f
220 nF
Figure 3. Typical application circuit
94 8280
4 (7)
TELEFUNKEN Semiconductors
Rev. A2, 13-Dec-96