U3660M Datasheet, PDF (3/7 Pages) TEMIC Semiconductors – Baseband Delay Line (64 Us)

U3660M-B
Electrical Characteristics
V_DD = 5.0 V, T_amb = +25°C, reference point Pin 3 and Pin 10 connected together,
super-sandcastle frequency of 15.625 kHz; unless otherwise specified.
Parameters
Test Conditions / Pins Symbol Min.
Typ.
Max.
Unit
DC-supply
Pins 1 and 9
Supply voltage
(analog part)
Pin 9
V_DD1
4.5
5.0
6.0
V
Supply voltage
(digital part)
Pin 1
V_DD2
4.5
5.0
6.0
V
Supply current
(analog part)
Pin 9
I_S1
3.5
8.0
mA
Supply current
(digital part)
Pin 1
I_S2
1
2
mA
Power dissipation
P
30
60
mW
Colour-difference input signals
Pins 14 and 16
Input signal
±(R-Y) PAL and NTSC
±(B-Y) PAL and NTSC
±(R-Y) SECAM
±(B-Y) SECAM
Input resistance
Input capacitance
Input clamping voltage
(peak-to-peak value)
Pin 16
Pin 14
Pin 16
Pin 14
Pins 14 and 16
Pins 14 and 16
non color input level
during clamping,
Pins 14 and 16
V_i
V_i
V_i
V_i
R_{14, 16}
C_{14, 16}
V₁₄, ₁₆
0.525
1.0
V
0.665
1.0
V
1.05
2.0
V
1.33
2.0
V
40
kW
10
pF
1.45
V
Colour-difference output signals
Pins 11 and 12
Output signal
±(R-Y) at Pin 11
±(B-Y) at Pin 12
Ratio of output amplitudes
at equal input signals
(peak-to-peak value)
all standards
all standards
V_O
1.05
V
V_O
1.33
V
V11 ^–0.4
0
+0.4
dB
V12
DC output voltage
Output resistance
Gain for PAL and NTSC
Gain for SECAM
Ratio of output signals on
Pins 11 and 12 for adjacent
time samples at constant in-
put signals
Pins 11 and 12
Pins 11 and 12
ratio V_O/V_i
ratio V_O/V_i
V_{i 14,16} = 1.33 V
(peak-to-peak value)
SECAM signals
V_{11, 12}
R_{11, 12}
3.0
V
400
W
G_v
5.5
6.0
6.5
dB
G_v
–1.0
0
+1.0
dB
V_(n)
–0.1
V_(n+1)
+0.1
dB
Noise voltage
(RMS value, Pins 11
and 12)
Delay of delayed signals
Delay of non-delayed
signals
W ^{Vi 14,16 = 0}
R_Gen < 300
f = 10 kHz to 1 MHz
V_noise
1.2
mV
t_d
63.94 64.0 64.06
ms
t_d
85
ns
TELEFUNKEN Semiconductors
3 (7)
Rev. A2, 13-Dec-96