U3660M Datasheet, PDF (2/7 Pages) TEMIC Semiconductors – Baseband Delay Line (64 Us)

U3660M-B
Pin Description
V_DD2 1
NC ₂
16 V_i(R-Y)
15 NC
GND2 ₃
14 ^Vi(B-Y)
NC 4
13 ^Rref
SC 5
12 VO(B-Y)
NC 6
11 V_O(R-Y)
NC ₇
10 ^GND1
NC ₈
9 ^VDD1
95 11252
Figure 2. Connection diagram
Pin Symbol
Function
1
V_DD2 Supply voltage for digital part
2
NC Not connected
3
GND2 Ground for digital part
4
NC Not connected
5
SC Sandcastle pulse input
6
NC Not connected
7
NC Not connected
8
NC Not connected
9
V_DD1 Supply voltage for analog part
10 GND1 Ground for analog part
11 V_O(R-Y) ±(R-Y) output signal
12 V_O(B-Y) ±(B-Y) output signal
13
R_ref Resistor for internal reference
14
V_i(B-Y) ±(B-Y) input signal
15
NC Not connected
16
V_i(R-Y) ±(R-B) input signal
Absolute Maximum Ratings
Parameters
Supply voltage (Pin 9)
Supply voltage (Pin 1)
Voltage at Pins 5, 11, 12, 14 and 16
Output current, Pins 11 and 12
Max. power dissipation
Storage temperature range
Electrostatic protection^* for input/output pins
Symbol
Value
Unit
V_DD1
–0.5 to +7
V
V_DD2
–0.5 to +7
V
V_n
–0.5 to V_S
V
I_out
20
mA
P
1.1
W
T_stg
–25 to +150
°C
±200
V
*
MIL standard 883D, method 3015.7 machine model (all power pins connected together).
Operating Range
Parameters
Supply voltage range (Pins 1 and 9)
Ambient temperature range
Symbol
Value
Unit
V_S
4.5 to 6.0
V
T_amb
0 to +70
°C
Thermal Resistance
Junction ambient
Parameters
Symbol
R_thJA
Value
80
Unit
K/W
2 (7)
TELEFUNKEN Semiconductors
Rev. A2, 13-Dec-96