DG418 Datasheet, PDF (4/10 Pages) TEMIC Semiconductors – Precision CMOS Analog Switches

DG417/418/419
Specifications^a for Unipolar Supplies
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V– = 0 V
V_L = 5 V, V_IN = 2.4 V, 0.8 V^f
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Temp^b Typ^c Min^d Max^d Min^d Max^d Unit
Analog Switch
Analog Signal Range^e
Drain-Source
On-Resistance
V_ANALOG
r_DS(on)
I_S = –10 mA, V_D = 3.8 V
V+ = 10.8 V
Full
Room 40
0
12
0
12 V
W
Dynamic Characteristics
Turn-On Time
t_ON
R_L = 300 W, C_L = 35 pF, V_S = 8 V
Room 110
Turn-Off Time
t_OFF
See Switching Time Test Circuit
Room 40
ns
Break-Before-Make
Time Delay
t_D
R_L = 300 W, C_L = 35 pF
DG419 Room
60
Charge Injection
Q
C_L = 10 nF, V_gen = 0 V, R_gen = 0 W
Room
5
pC
Power Supplies
Positive Supply
Current
I+
Room 0.001
Negative Supply
Current
I–
V+ = 13.2 V, V_L = 5.25 V
V_IN = 0 or 5 V
Room –0.001
mA
Logic Supply Current
I_L
Room 0.001
Ground Current
I_GND
Room –0.001
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V_IN = input voltage to perform proper function.
4
Siliconix
S-52880—Rev. D, 28-Apr-97