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DG418 Datasheet, PDF (3/10 Pages) TEMIC Semiconductors – Precision CMOS Analog Switches
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DG417/418/419
Specificationsa
Parameter
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
Symbol
VANALOG
rDS(on)
Switch Off
Leakage Current
IS(off)
ID(off)
Channel On
Leakage Current
ID(on)
Digital Control
Input Current
VIN Low
IIL
Input Current
VIN High
IIH
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Transition Time
tTRANS
Break-Before-Make
Time Delay
Charge Injection
Source Off
Capacitance
Drain Off Capacitance
tD
Q
CS(off)
CD(off)
Channel On
Capacitance
CD(on)
Power Supplies
Positive Supply
Current
I+
Negative Supply
Current
I–
Logic Supply Current
IL
Ground Current
IGND
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V– = –15 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Tempb Typc Mind Maxd Mind Maxd Unit
IS = –10 mA, VD = "12.5 V
V+ = 13.5 V, V– = –13.5 V
Full
–15 15 –15 15 V
Room 20
Full
35
45
35
45
W
V+ = 16.5 V, V– = –16.5 V
VD = #15.5 V
VS = "15.5 V
Room –0.1 –0.25 0.25 –0.25 0.25
Full
–20 20
–5
5
DG417 Room –0.1 –0.25 0.25 –0.25 0.25
DG418 Full
–20 20
–5
5
DG419
Room
Full
–0.1
–0.75 0.75 –0.75 0.75
–60 60 –12 12
nA
V+ = 16.5 V, V– = –16.5 V
VS = VD = "15.5 V
DG417 Room –0.4 –0.4 0.4 –0.4 0.4
DG418 Full
–40 40 –10 10
DG419
Room
Full
–0.4
–0.75 0.75 –0.75 0.75
–60 60 –12 12
Full 0.005 –0.5 0.5 –0.5 0.5
mA
Full 0.005 –0.5 0.5 –0.5 0.5
RL = 300 W, CL = 35 pF
VS = "10 V
DG417 Room 100
DG418 Full
175
250
175
250
See Switching Time
DG417 Room 60
145
145
Test Circuit
DG418 Full
210
210
RL = 300 W, CL = 35 pF
VS1 = "10 V
VS2 = #10 V
DG419
Room
Full
ns
175
175
250
250
RL = 300 W, CL = 35 pF
VS1 = VS2 = "10 V
DG419 Room 13
5
5
CL = 10 nF, Vgen = 0 V, Rgen = 0 W
Room 60
pC
Room
8
f = 1 MHz, VS = 0 V
DG417
DG418
Room
8
pF
f = 1 MHz, VS = 0 V
DG417
DG418
Room
30
DG419 Room 35
V+ = 16.5 V, V– = –16.5 V
VIN = 0 or 5 V
Room 0.001
1
1
Full
5
5
Room –0.001 –1
–1
Full
–5
–5
Room 0.001
1
Full
5
1
mA
5
Room
Full
–0.000
1
–1
–5
–1
–5
Siliconix
3
S-52880—Rev. D, 28-Apr-97
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