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TC4420 Datasheet, PDF (4/5 Pages) TelCom Semiconductor, Inc – 6A HIGH-SPEED MOSFET DRIVERS
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TC4420
TC4429
TYPICAL CHARACTERISTICS
1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS
Rise Time vs. Supply Voltage
120
100
C L = 10,000 pF
80
60
C L = 4700 pF
40
C L = 2200 pF
20
Fall Time vs. Supply Voltage
100
80
Rise and Fall Times vs. Temperature
50
CL = 2200 pF
VDD = 18V
40
C L = 10,000 pF
60
30
tFALL
40
C L = 4700 pF
20
tRISE
C L = 2200 pF
20
10
0
0
5
7
9
11 13
15
5
7
9
11
13 15
VDD (V)
VDD (V)
Rise Time vs. Capacitive Load
100
80
60
VDD = 5V
40
VDD = 12V
VDD = 18V
20
Fall Time vs. Capacitive Load
100
80
60
40
VDD = 5V
VDD = 12V VDD = 18V
20
0
–60 –20
20 60
TA (°C)
100 140
Propagation Delay Time
vs. Supply Voltage
65
60
55
tD2
50
45
tD1
40
10
1000
10,000
CAPACITIVE LOAD (pF)
10
1000
10,000
CAPACITIVE LOAD (pF)
35
4
6 8 10 12 14 16 18
SUPPLY VOLTAGE (V)
Propagation Delay Time
vs. Temperature
50
CL = 2200 pF
VDD = 18V
40
tD2
30
tD1
Supply Current vs. Capacitive Load
84
VDD = 15V
70
56
42
Supply Current vs. Frequency
1000
CL= 2200 pF
18V
100
10V
5V
20
500 kHz
28
10
10
14
0
0
–60 –20 20 60 100 140
0
TA (°C)
200 kHz
20 kHz
0
100
1000
10,000
0
CAPACITIVE LOAD (pF)
100
1000
FREQUENCY (kHz)
10,000
4-228
TELCOM SEMICONDUCTOR, INC.
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