TC4420 Datasheet, PDF (2/5 Pages) TelCom Semiconductor, Inc – 6A HIGH-SPEED MOSFET DRIVERS

6A HIGH-SPEED MOSFET DRIVERS
TC4420
TC4429
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage ............................................... – 5V to > V_DD
Input Current (V_IN > V_DD) ......................................... 50mA
Power Dissipation, T_A ≤ 70°C
PDIP ...............................................................730mW
SOIC ...............................................................470mW
CerDIP ............................................................800mW
5-Pin TO-220 ......................................................1.6W
Package Power Dissipation (T_A ≤ 70°C)
5-Pin TO-220 (With Heat Sink) .........................1.60W
Derating Factors (To Ambient)
PDIP ............................................................. 8mW/°C
SOIC ............................................................. 4mW/°C
CerDIP ....................................................... 6.4mW/°C
5-Pin TO-220 .............................................. 12mW/°C
Thermal Impedances (To Case)
5-Pin TO-220 R_θJ-C ........................................ 10°C/W
Storage Temperature Range ................ – 65°C to +150°C
Operating Temperature (Chip) .............................. +150°C
Operating Temperature Range (Ambient)
C Version ............................................... 0°C to +70°C
I Version ........................................... – 25°C to +85°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS: T_A = +25°C with 4.5V ≤ V_DD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ Max
Input
V_IH
V_IL
V_IN (Max)
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Voltage Range
I_IN
Output
Input Current
V_OH
High Output Voltage
V_OL
Low Output Voltage
R_O
Output Resistance, High
R_O
Output Resistance, Low
I_PK
Peak Output Current
I_REV
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
t_R
Rise Time
t_F
Fall Time
t_D1
Delay Time
t_D2
Delay Time
Power Supply
I_S
Power Supply Current
V_DD
Operating Input Voltage
0V ≤ V_IN ≤ V_DD
See Figure 1
See Figure 1
I_OUT = 10 mA, V_DD = 18V
I_OUT = 10 mA, V_DD = 18V
V_DD = 18V (See Figure 5)
Duty Cycle ≤ 2%
t ≤ 300 µs
Figure 1, C_L = 2500 pF
Figure 1, C_L = 2500 pF
Figure 1
Figure 1
V_IN = 3V
V_IN = 0V
2.4
1.8
—
—
1.3
0.8
–5
— V_DD+0.3
– 10
—
10
V_DD – 0.025 —
—
—
—
2.1
—
1.5
—
6
1.5
—
—
0.025
2.8
2.5
—
—
—
25
35
—
25
35
—
55
75
—
55
75
—
0.45
1.5
—
55
150
4.5
—
18
Unit
V
V
V
µA
V
V
Ω
Ω
A
A
nsec
nsec
nsec
nsec
mA
µA
V
4-226
TELCOM SEMICONDUCTOR, INC.